A new research paper titled “Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages” was published by researchers at Sungkyunkwan University and Korea University.

Samsung is reportedly on the verge of announcing its next-generation V-NAND technology for SSDs, which will feature 290 layers for the first time. The company currently offers 236-layer V-NAND, so ...

Yangtze Memory Technology Corporation (YMTC) is progressing in the development of its 3D NAND memory technology, specifically its Xtacking 4.0 architecture. This initiative has resulted in the ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

3D NAND suppliers are accelerating their efforts to move to the next technology nodes in a race against growing competition, but all of these vendors are facing an assortment of new business, ...

Toshiba has announced the development of a 16-die (max.) stacked NAND flash memory that uses Through Silicon Via (TSV) technology. The prototype will be shown at the Flash Memory Summit 2015, being ...

Yangtze Memory Technologies (YMTC) is shipping a TLC NAND with 294 layers of which 232 are active. 232 is the same as the company’s previous, 4th-generation NAND, which has 253 active layers. It is ...

Hynix was showing off a sample of its 321-layer 1Tb TLC NAND chips at The Flash Memory Summit earlier this week, though volume production isn’t due until 2025. Hynix used a CMOS under Array (CuA) ...

The performance and bit density of solid-state storage devices will be enhanced by Samsung's 8th Generation V-NAND memory, which will feature over 200 layers. In 2013, Samsung's 24-layer V-NAND flash ...

No, I’m not referring to the latest SIA (Semiconductor Industry Association) forecast. For that, check out Suzanne Defree’s article: Moderate but not disappointing growth years to follow record 2010 ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO:6502) today announced the development of the world’s first *1 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.