The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.
UK fab-less semiconductor company Cambridge GaN Devices has finally revealed its initial product range, at APEC in Houston. The company is using monolithic GaN integration, branded ‘ICeGaN’, to modify ...
Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...
The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...
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Glasgow University researchers have led work that could lead to a new generation of diamond-based transistors for use in high-power electronics. The team has found a new way to use diamond as the ...
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
Indian Institute of Science (IISc) researchers have developed a fully indigenous gallium nitride (GaN) power switch that can have potential applications in systems like power converters for electric ...
Finnish company Semiqon has developed a transistor that operates with virtually zero heat dissipation. They have made silicon-based quantum processors to make future quantum computers more affordable, ...
Switching transistors made from the semiconductor material silicon carbide (SiC) switch with lower losses than conventional MOSFETs. With the MEG Ai1600T PCIE5, the Taiwanese company MSI is now ...
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