Design-Reuse

Low Power 7T SRAM Cell Scheme - ''Saving Write Zero Power''

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...
Design-Reuse

IBM Builds World's Smallest SRAM Memory Cell

YORKTOWN HEIGHTS, NY, Aug 18, 2008-- IBM and its joint development partners -- AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) -- today ...
Nature

Low Power SRAM Design and Technology

Low power Static Random-Access Memory (SRAM) design remains at the forefront of research in modern electronics due to its critical role in minimising energy consumption while maintaining high ...
New Electronics

Ultra-scaled EUV-enabled surrounding gate transistor SRAM cell

Imec and Unisantis, a developer of Surrounding Gate Transistor (SGT) semiconductor technology, have revealed significant progress in the development of a process flow targeting an SGT 6T-SRAM cell ...
Electronics Weekly

Gate-all-around key to 5nm SRAM cell

A process flow for six-transistor (6T) SRAM suitable for 5nm chips has been created by Belgian research lab Imec working with Unisantis Electronics Singapore. It uses surrounding gate transistors ...
Semiconductor Engineering

Mixed SRAM And eDRAM Cell For Area And Energy-Efficient On-Chip AI Memory (Yale Univ.)

“AI chips commonly employ SRAM memory as buffers for their reliability and speed, which contribute to high performance. However, SRAM is expensive and demands significant area and energy consumption.
Electronics Weekly

IBM works with AMD and Freescale to build first 22nm SRAM

IBM and a group of semiconductor firms – AMD, Freescale, STMicroelectronics and Toshiba – have worked with the US-based College of Nanoscale Science and Engineering (CNSE) to fabricate what they claim ...